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4-18 GHz Zero-Bias Asymmetrical Spacer Layer Tunnel Diode Detector
Omar S Abdulwahid, Saad G Muttlak, James Sexton, Michael J Kelly, Mohamed Missous,
Volume 21, Issue 4 (11-2025)
Abstract
An analysis of 6×6 µm2 GaAs/AlAs Asymmetric Spacer Layer Tunnel diode has been conducted to evaluate the DC and RF characteristics at different bias conditions. At zero voltage operation, the diode exhibited a measured curvature coefficient of 22 V-1, corresponding to a junction resistance of 27 kΩ. The measured and simulated S11 reflection coefficient of the integrated detector including the diode, matching circuit, and output capacitance achieved to be less than -10 dB at the desired frequency. The extracted low series resistance and junction capacitance of the tunnel diode resulted a high voltage sensitivity of 3650 V/W and low noise equivalent power of 5.5 pW/  at 11 GHz resonant frequency and -27 dBm input power. The developed detector model can be extended to implement RF detectors operating at frequencies reaching mm-wave regime applications. This is with consideration of the requirements for sub-micrometer scale mesa devices, eliminating the effects of associated parasitic elements and improved matching network performance.

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Creative Commons License
© 2022 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.